93CS56B1

DESCRIPTION
The ST93CS56 and ST93CS57 are 2K bit Electrically Erasable Programmable Memory (EEPROM)
fabricatedwith SGS-THOMSON’s High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 2K bit memory is organized as 128 x 16 bit
words.The memory is accessed by a set of instructions which include Read, Write, Page Write, Write
All and instructions used to set the memory protection. A Read instruction loads the address of the
first word to be read into an internal address
pointer.

Category:

Deskripsi

2K (128 x 16) SERIAL MICROWIRE EEPROM

40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
– 3V to 5.5V for the ST93CS56
– 2.5V to 5.5V for the ST93CS57
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS56 and ST93CS57 are replaced by
the M93S56

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